Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs

研究成果: Conference contribution同行評審

58 引文 斯高帕斯(Scopus)

摘要

This paper reports a comprehensive time dependent dielectric breakdown (TDDB) evaluation of recessed-gate devices with five different AlGaN barrier thicknesses with characteristics ranging from a D-mode MIS-HEMT to an E-mode MIS-FET. First, the fitted parameter β (the slope of the Weibull distribution) was smaller for a deeper recessed gate and larger for a thicker gate dielectric. Secondly, the extrapolated VG (criterium of 0.01% failures after 20 years) for the devices with Wg (gate width) = 10μm was lower when less AlGaN barrier remains under the gate. However, the extrapolated VG was increased when the AlGaN barrier was completely removed. Thirdly, a deeper recessed gate could result in a dominant percolation path due to a thinner gate dielectric on the sidewall of the gate recess edge. Fourthly, the Weibull distribution could scale with the gate width, indicating an intrinsic failure. Finally, the lifetime was extrapolated to 0.01% of failures for Wg=36mm at 150oC after 20 years by fitting the data with a power law or an exponential law to gate voltages of 4.9V and 7.2V, respectively.

原文English
主出版物標題2015 IEEE International Reliability Physics Symposium, IRPS 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面6C41-6C46
ISBN(電子)9781467373623
DOIs
出版狀態Published - 26 5月 2015
事件IEEE International Reliability Physics Symposium, IRPS 2015 - Monterey, United States
持續時間: 19 4月 201523 4月 2015

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2015-May
ISSN(列印)1541-7026

Conference

ConferenceIEEE International Reliability Physics Symposium, IRPS 2015
國家/地區United States
城市Monterey
期間19/04/1523/04/15

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