@article{46635aac991544f89d289ab061d1645f,
title = "Ti supersaturated Si by microwave annealing processes",
abstract = "Microwave annealing (MWA) processes were used for the first time to obtain Ti supersaturated Si. High Ti doses were ion implanted on Si substrates and subsequently MWA processed to recrystallize the amorphous layer. The resulting layers were monocrystalline with a high density of defects. Ti depth profiles indicate that diffusion is avoided once recrystallization is produced. Finally, the electronic transport properties measurements point to a decoupling effect between the Si:Ti layer and the substrate. The implanted layer present also a shallow donor and very high Hall mobility.",
keywords = "implantation, infrared, microelectronics, microwave, silicon, supersaturated, titanium",
author = "J. Olea and G. Gonz{\'a}lez-D{\'i}az and D. Pastor and E. Garc{\'i}a-Hemme and D. Caudevilla and S. Algaidy and F. P{\'e}rez-Zenteno and S. Duarte-Cano and R. Garc{\'i}a-Hernansanz and {del Prado}, A. and Andr{\'e}s, {E. San} and I. M{\'a}rtil and Lee, {Yao Jen} and Hong, {Tzu Chieh} and Chao, {Tien Sheng}",
note = "Publisher Copyright: {\textcopyright} 2023 IOP Publishing Ltd.",
year = "2023",
month = feb,
doi = "10.1088/1361-6641/acac4a",
language = "English",
volume = "38",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "2",
}