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THz emission from InN
Hyeyoung Ahn
*
, Yi Jou Ye, Yu Liang Hong, Shangjr Gwo
*
此作品的通信作者
光電工程學系
研究成果
:
Conference contribution
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Keyphrases
Terahertz Emission
100%
Indium Nitride
100%
Nitride Films
50%
A-plane
25%
A-axis
25%
Magnesium Doped
25%
Molecular Beam Epitaxy
12%
Order of Magnitude
12%
Undoped
12%
Carrier Concentration
12%
Second Harmonic Generation
12%
Wave Amplitude
12%
Photoexcited Carriers
12%
Emission Power
12%
Band Bending
12%
Doped Films
12%
Angle Dependence
12%
Space Charge Region
12%
Wurzite
12%
Power Enhancement
12%
Azimuthal Angle
12%
In-plane Electric Field
12%
Radiation Mechanisms
12%
Terahertz Wave
12%
Magnesium
12%
Large Band
12%
Wide Space
12%
Terahertz Power
12%
Material Science
Indium
100%
Nitride Compound
100%
Film
62%
Magnesium
37%
Molecular Beam Epitaxy
12%
Carrier Concentration
12%
Engineering
Nitride
100%
Terahertz
100%
Azimuthal
12%
Harmonic Generation
12%
Band Bending
12%
Induced Polarization
12%
Space Charge Region
12%
Electric Field
12%
Carrier Concentration
12%
Physics
Indium
100%
Nitride
100%
Second Harmonic Generation
12%
Space Charge
12%
Molecular Beam Epitaxy
12%
Electric Field
12%