摘要
The random work-function (WK) induced threshold voltage fluctuation (oVth )in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced oVth are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 4485-4488 |
| 頁數 | 4 |
| 期刊 | Journal of Nanoscience and Nanotechnology |
| 卷 | 12 |
| 發行號 | 6 |
| DOIs | |
| 出版狀態 | Published - 2012 |