Threshold voltage design of UTB SOI SRAM with improved stability/ variability for ultralow voltage near subthreshold operation

Keyphrases

• Threshold Voltage 100%
• Ultra-low Voltage 100%
• Read Static Noise Margin 100%
• Enhanced Stability 100%
• Subthreshold Operation 100%
• Ultra-thin SOI 100%
• 6T SRAM Cell 50%
• Standby Leakage 50%
• High Performance 25%
• Work Function 25%
• Bitline 25%
• Band Edge 25%
• Pre-charge 25%
• Suprathreshold 25%
• Subthreshold Region 25%
• Access Time 25%
• Threshold Region 25%
• Stability Margin 25%

Engineering

• Noise Margin 100%
• Band Edge 25%
• Bit Line 25%
• Stability Margin 25%
• Access Time 25%
• Operating Cell 25%

Earth and Planetary Sciences

• Threshold Voltage 100%
• Work Function 50%