Threshold ion parameters of line-type soft-errors in biased thin-BOX SOI SRAMs: Difference between sensitivities to terrestrial and space radiation

C. Chung, D. Kobayashi, K. Hirose

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Thin-BOX SOI technology is drawing attention for its low soft error sensitivity. Terrestrial radiation tests already demonstrated its further reduction under back-bias conditions. However, recent heavy ion tests with SRAMs exhibited the opposite result, a 100-fold increase accompanying 10-bits-long line-type multi-cell upsets, when they were biased. This work proposes a metal bridge model, suggesting that this difference in response to the back-bias conditioning stems from the difference in ion parameters such as range and linear energy transfer.

原文English
主出版物標題2018 IEEE International Reliability Physics Symposium, IRPS 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面4C.31-4C.36
頁數6
ISBN(電子)9781538654798
DOIs
出版狀態Published - 25 5月 2018
事件2018 IEEE International Reliability Physics Symposium, IRPS 2018 - Burlingame, United States
持續時間: 11 3月 201815 3月 2018

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2018-March
ISSN(列印)1541-7026

Conference

Conference2018 IEEE International Reliability Physics Symposium, IRPS 2018
國家/地區United States
城市Burlingame
期間11/03/1815/03/18

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