Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs from Room-Temperature to Cryogenic Temperatures

Yo Ming Chang, Ting Tsai, Yu Wen Chiu, Horng Chih Lin, Pei Wen Li*

*此作品的通信作者

研究成果: Article同行評審

摘要

We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation T= 300 K - 4.5 K. Subthreshold swing (SS)-plateau at 125 K - 50 K in combination with SS-linearity at T= 300 K - 125 K and 50 K - 4.5 K were observed in different types of FD-SOI p-MOSFETs with channel length (LG) ≤100 nm, which is possibly attributed to temperature-dependent dopant ionization induced band-to-band and trap-assisted tunneling across the drain-body junction. The phenomenon of SS linearly decreasing with temperature at T < 50 K is not observed in neither FD-SOI n-MOSFETs nor 28 nm bulk CMOSFETs.

原文English
頁(從 - 到)619-623
頁數5
期刊IEEE Journal of the Electron Devices Society
11
DOIs
出版狀態Published - 2023

指紋

深入研究「Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs from Room-Temperature to Cryogenic Temperatures」主題。共同形成了獨特的指紋。

引用此