Three dimensional integration of ReRAMs

Boris Hudec*, Che-Chia Chang, I-Ting Wang, Karol Frohlich, Tuo-Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data.

3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory. In this talk we review current state-of-the-art works which offer promising solutions, utilizing either filamentary or non-filamentary ReRAM designs, including our own. We will discuss the pros and cons of different approaches and summarize the open problems, drawing possible solutions.

原文English
主出版物標題2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
發行者IEEE
頁面1-2
頁數2
DOIs
出版狀態Published - 23 7月 2018
事件18th IEEE International Conference on Nanotechnology (IEEE-NANO) - Cork, 愛爾蘭
持續時間: 23 7月 201826 7月 2018

出版系列

名字IEEE International Conference on Nanotechnology
發行者IEEE
ISSN(列印)1944-9399

Conference

Conference18th IEEE International Conference on Nanotechnology (IEEE-NANO)
國家/地區愛爾蘭
城市Cork
期間23/07/1826/07/18

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