摘要
Storage-class memory, non-volatile, ultra-dense and lightning fast, may enable memory-driven computing to revolutionize the current architectures leading to an on-chip processing of vast amount of data.
3D vertical resistive random access memory (ReRAM) is a hot candidate for storage-class memory. In this talk we review current state-of-the-art works which offer promising solutions, utilizing either filamentary or non-filamentary ReRAM designs, including our own. We will discuss the pros and cons of different approaches and summarize the open problems, drawing possible solutions.
原文 | English |
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主出版物標題 | 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) |
發行者 | IEEE |
頁面 | 1-2 |
頁數 | 2 |
DOIs | |
出版狀態 | Published - 23 7月 2018 |
事件 | 18th IEEE International Conference on Nanotechnology (IEEE-NANO) - Cork, 愛爾蘭 持續時間: 23 7月 2018 → 26 7月 2018 |
出版系列
名字 | IEEE International Conference on Nanotechnology |
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發行者 | IEEE |
ISSN(列印) | 1944-9399 |
Conference
Conference | 18th IEEE International Conference on Nanotechnology (IEEE-NANO) |
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國家/地區 | 愛爾蘭 |
城市 | Cork |
期間 | 23/07/18 → 26/07/18 |