@inproceedings{c218c7b590b3416995407ee5a7dfa6a9,
title = "Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy",
abstract = "We performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution.",
author = "Heng Li and Cheng, {Hui Yu} and Chen, {Wei Liang} and Huang, {Yi Hsin} and Li, {Chi Kang} and Chang, {Chiao Yun} and Wu, {Yuh Renn} and Tien-chang Lu and Chang, {Yu Ming}",
note = "Publisher Copyright: {\textcopyright} 2017 The Japan Society of Applied Physics.; 22nd Microoptics Conference, MOC 2017 ; Conference date: 19-11-2017 Through 22-11-2017",
year = "2017",
month = nov,
day = "19",
doi = "10.23919/MOC.2017.8244609",
language = "English",
series = "22nd Microoptics Conference, MOC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "308--309",
booktitle = "22nd Microoptics Conference, MOC 2017",
address = "美國",
}