Thomas-Fermi interfacial screening with voltage-dependence of the screening lengths and influence of oxygen vacancies in MFTJs

Deepali Jagga, Artur Useinov

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

Magnetic tunnel junctions with ferroelectric (FE) barrier (MFTJs) are simulated within modified transport model and compared with experimental samples. As a novelty, linearized approach of Thomas Fermi screening is utilized for a simulation of the tunneling behavior through the magnetic metal/dielectric, magnetic metal/ferroelectric (MM/DE, MM/FE) and non-magnetic metal/ferroelectric (NM/FE) interfaces, where the screening length for each interface changes with applied voltage, accounting the growing penetration of the electric field into the metal. In this work, current density (J) and tunnel electroresistance (TER) vs the applied voltage (V) are compared for NM/FE(3nm)/MM and NM/DE/ FE(5nm)/DE/MM junctions. In addition, the impact of oxygen vacancies located on the interfaces is incorporated in the model for NM/DE/FE(5nm)/DE/MM system. As a result, theoretical model modification allows to reproduce experimental data with a better precision than previous approach with a constant screening lengths.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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