Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing

Chia Cheng Wu, Ray-Hua Horng*, Dong Sing Wuu, Tsai Ning Chen, Shih Shian Ho, Chia Jen Ting, Hung Yin Tsai

*此作品的通信作者

研究成果: Article同行評審

33 引文 斯高帕斯(Scopus)

摘要

A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO 3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO 3 substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.

原文English
頁(從 - 到)3822-3827
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號4 B
DOIs
出版狀態Published - 25 4月 2006

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