Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing

Chia Cheng Wu; Ray-Hua Horng; Dong Sing Wuu; Tsai Ning Chen; Shih Shian Ho; Chia Jen Ting; Hung Yin Tsai

doi:10.1143/JJAP.45.3822

Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing

Chia Cheng Wu, Ray-Hua Horng^*, Dong Sing Wuu, Tsai Ning Chen, Shih Shian Ho, Chia Jen Ting, Hung Yin Tsai

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摘要

A lithium niobate (LiNbO₃) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO ₃ and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO₃ substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO ₃ substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO₃ film can be obtained.

原文	English
頁（從 - 到）	3822-3827
頁數	6
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	45
發行號	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3822
出版狀態	Published - 25 4月 2006

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10.1143/JJAP.45.3822

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title = "Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing",

abstract = "A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO 3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO 3 substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.",

keywords = "Chemical mechanical polishing, Lithium niobate (LiNbO) substrate, Plasma, Wafer bonding",

author = "Wu, {Chia Cheng} and Ray-Hua Horng and Wuu, {Dong Sing} and Chen, {Tsai Ning} and Ho, {Shih Shian} and Ting, {Chia Jen} and Tsai, {Hung Yin}",

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AU - Wu, Chia Cheng

AU - Horng, Ray-Hua

AU - Wuu, Dong Sing

AU - Chen, Tsai Ning

AU - Ho, Shih Shian

AU - Ting, Chia Jen

AU - Tsai, Hung Yin

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N2 - A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO 3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO 3 substrate can be decreased from 400 to 10μm without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.

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KW - Chemical mechanical polishing

KW - Lithium niobate (LiNbO) substrate

KW - Plasma

KW - Wafer bonding

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing

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