Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Yung Hao Lin; Chung Len Lee; Tan Fu Lei; Tien-Sheng Chao

doi:10.1109/55.382227

Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

Yung Hao Lin, Chung Len Lee, Tan Fu Lei, Tien-Sheng Chao

電子物理學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF+2 in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.

原文	English
頁（從 - 到）	164-165
頁數	2
期刊	IEEE Electron Device Letters
卷	16
發行號	5
DOIs	https://doi.org/10.1109/55.382227
出版狀態	Published - 1 1月 1995

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Thin Polyoxide on the Top of Poly-Si Gate to Suppress Boron Penetration for pMOS

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