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Thin-GaN LED materials
Ray Hua Horng
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電子研究所
研究成果
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指紋
深入研究「Thin-GaN LED materials」主題。共同形成了獨特的指紋。
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Keyphrases
GaN-based Light-emitting Diodes
100%
P-GaN
66%
Light-emitting Diodes
66%
Surface Texture
50%
Omnidirectional Reflector
50%
Agni
50%
Reflective Structure
33%
Hexagonal Cavity
33%
Low Temperature
16%
Thermal Annealing
16%
Power Output
16%
Thin Film Structure
16%
Large chips
16%
Chip Size
16%
Sapphire
16%
Undoped
16%
Layer Thickness
16%
GaN Layers
16%
Chemical Vapor
16%
Specific Contact Resistance
16%
Light Extraction Efficiency
16%
Double-sided
16%
Reflectivity
16%
Wafer Bonding
16%
Laser Lift-off
16%
Luminous Intensity
16%
Au@Ag
16%
Metal-organic Materials
16%
Anneal Process
16%
Luminance Efficiency
16%
Ag Mirror
16%
GaN Cap Layer
16%
Mirror Substrate
16%
Substrate Structure
16%
Optimum Thickness
16%
Mirror Structure
16%
Low-temperature Condition
16%
Diode Properties
16%
Engineering
Light-Emitting Diode
100%
Directional
30%
Thin Films
20%
Low-Temperature
20%
Textured Surface
20%
Layer Thickness
10%
Experimental Result
10%
Output Power
10%
Texturing
10%
Light Extraction Efficiency
10%
Temperature Condition
10%
Wafer Bonding
10%
Cap Layer
10%
Reflectance
10%
Material Science
Light-Emitting Diode
100%
Surface (Surface Science)
40%
Thin Films
10%
Sapphire
10%
Indium Tin Oxide
10%
Thin Film Structure
10%
Contact Resistance
10%
Reflectivity
10%