Thin film transistor with Al-Ni-La alloy gate metallization technology

Po-Tsun Liu; Yi Teh Chou; Ting Hao Hsu; Chur Shyang Fuh

doi:10.1149/1.3516178

Thin film transistor with Al-Ni-La alloy gate metallization technology

Po-Tsun Liu^*, Yi Teh Chou, Ting Hao Hsu, Chur Shyang Fuh

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application.

原文	English
頁數	3
期刊	Electrochemical and Solid-State Letters
卷	14
發行號	2
DOIs	https://doi.org/10.1149/1.3516178
出版狀態	Published - 28 1月 2011

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abstract = "In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application.",

author = "Po-Tsun Liu and Chou, {Yi Teh} and Hsu, {Ting Hao} and Fuh, {Chur Shyang}",

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AU - Liu, Po-Tsun

AU - Chou, Yi Teh

AU - Hsu, Ting Hao

AU - Fuh, Chur Shyang

PY - 2011/1/28

Y1 - 2011/1/28

N2 - In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application.

AB - In this study, an aluminum-nickel-lanthanum (Al-Ni-La) alloy is introduced, for the first time, to hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) for gate metallization technology. Ni atoms in Al-Ni-La can effectively improve contact characteristic with ITO film, while La can increase the uniformity of contact resistance during film deposition compared to the conventional Al-Nd alloy. Besides, Al-Ni-La alloy has advantages of a simple process and better prevention against hillock issues, which benefits active matrix liquid-crystal display (AMLCD) manufacture. The Al-Ni-La gate thin film transistor (TFT) also exhibited reliable electrical characteristics. The process compatibility with typical TFT manufacture makes Al-Ni-La gate metallization greatly promising for AMLCD technology application.

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Thin film transistor with Al-Ni-La alloy gate metallization technology

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