Thin film GaN LEDs using a patterned oxide sacrificial layer by chemical lift-off process

Shih Hao Chuang, Chun Ting Pan, Kun Ching Shen, Sin Liang Ou, Dong Sing Wuu, Ray-Hua Horng

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

A high-quality GaN-based vertical light-emitting diode (LED) was successfully fabricated and transferred to an electroplated Cu substrate using strip-patterned silicon dioxide SiO 2 as a sacrificial layer in a chemical lift-off (CLO) process. The SiO 2 strip patterns not only provide the sacrificial structure during the detachment process, but also improve the quality of GaN epilayers through epitaxial lateral overgrowth. Compared with conventional LEDs, the CLO-LEDs have a higher output power and a lower forward voltage. The CLO-LED has a decrease in forward voltage of 0.42 V (at 20 mA) as compared with the conventional LED. In addition, at a drive current of 350 mA, the output power of CLO-LEDs is enhanced SiO 2 fold, compared with that of conventional LEDs.

原文English
文章編號6654253
頁(從 - 到)2435-2438
頁數4
期刊IEEE Photonics Technology Letters
25
發行號24
DOIs
出版狀態Published - 15 十二月 2013

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