Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Yi Gin Yang; Bing Yue Tsui

doi:10.1109/VLSI-TSA.2015.7117579

Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer

Yi Gin Yang, Bing Yue Tsui

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO₂ would damage the quality of GeO₂ and degrade the interface. Both Al₂O₃ and AlN have been proposed as intermediate layer between high-k dielectric and GeO₂, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al₂O₃ is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10^-2 A/cm²), and acceptable interface state density (∼4×10¹¹ 1/eV/cm²) have been demonstrated by the HfO₂/N₂-plasma-nitrided Al₂O₃/GeOx/Ge MIS structure.

原文	English
主出版物標題	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781479973750
DOIs	https://doi.org/10.1109/VLSI-TSA.2015.7117579
出版狀態	Published - 3 6月 2015
事件	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, 台灣持續時間: 27 4月 2015 → 29 4月 2015

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
卷	2015-June
ISSN（列印）	1930-8868

Conference

Conference	2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
國家/地區	台灣
城市	Hsinchu
期間	27/04/15 → 29/04/15

存取文件

10.1109/VLSI-TSA.2015.7117579

其它文件與鏈接

Link to publication in Scopus

引用此

Yang, Y. G., & Tsui, B. Y. (2015). Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer. 於 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 文章 7117579 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; 卷 2015-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2015.7117579

Yang, Yi Gin ; Tsui, Bing Yue. / Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer. 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

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title = "Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer",

abstract = "It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.",

author = "Yang, {Yi Gin} and Tsui, {Bing Yue}",

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Yang, YG & Tsui, BY 2015, Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer. 於 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015., 7117579, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 卷 2015-June, Institute of Electrical and Electronics Engineers Inc., 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015, Hsinchu, 台灣, 27/04/15. https://doi.org/10.1109/VLSI-TSA.2015.7117579

Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer. / Yang, Yi Gin; Tsui, Bing Yue.
2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7117579 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings; 卷 2015-June).

研究成果: Conference contribution › 同行評審

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N2 - It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.

AB - It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.

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Yang YG, Tsui BY. Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al₂O₃ intermediate layer. 於 2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7117579. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VLSI-TSA.2015.7117579