Thin effective oxide thickness (∼0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer

Yi Gin Yang, Bing Yue Tsui

    研究成果: Conference contribution同行評審

    6 引文 斯高帕斯(Scopus)

    摘要

    It is known that high dielectric constant (high-k) dielectric deposition on ultrathin GeO2 would damage the quality of GeO2 and degrade the interface. Both Al2O3 and AlN have been proposed as intermediate layer between high-k dielectric and GeO2, but the process has not been optimized. In this work, it is observed that the N2-plasma-nitrided Al2O3 is a good intermediate layer to suppress GeOx volatilization. Thin effective oxide thickness (∼0.5 nm), low leakage current (<4×10-2 A/cm2), and acceptable interface state density (∼4×1011 1/eV/cm2) have been demonstrated by the HfO2/N2-plasma-nitrided Al2O3/GeOx/Ge MIS structure.

    原文English
    主出版物標題2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
    發行者Institute of Electrical and Electronics Engineers Inc.
    ISBN(電子)9781479973750
    DOIs
    出版狀態Published - 3 6月 2015
    事件2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015 - Hsinchu, Taiwan
    持續時間: 27 4月 201529 4月 2015

    出版系列

    名字International Symposium on VLSI Technology, Systems, and Applications, Proceedings
    2015-June
    ISSN(列印)1930-8868

    Conference

    Conference2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
    國家/地區Taiwan
    城市Hsinchu
    期間27/04/1529/04/15

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