TY - JOUR
T1 - Thickness scaling and reliability comparison for the inter-poly high-κ dielectrics
AU - Chen, Yung Yu
AU - Chien, Chao-Hsin
PY - 2007/8
Y1 - 2007/8
N2 - In this letter, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with conventional oxide/nitride/oxide (ONO) IPD. Regardless of deposition tools, drastic leakage current reduction and reliability improvement have been demonstrated by replacing ONO IPD with highpermittivity (high-κ) IPDs, which is suitable for mass production applications in the future. Moreover, metal-organic chemical vapor deposition (MOCVD) can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using the MOCVD, the charge-to-breakdown (QBD) can be significantly improved, in addition to enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that high-κ IPD, particularly deposited by MOCVD, possesses great potential for next-generation stacked-gate Flash memories.
AB - In this letter, the inter-poly dielectric (IPD) thickness, scaling, and reliability characteristics of Al2O3 and HfO2 IPDs are studied, which are then compared with conventional oxide/nitride/oxide (ONO) IPD. Regardless of deposition tools, drastic leakage current reduction and reliability improvement have been demonstrated by replacing ONO IPD with highpermittivity (high-κ) IPDs, which is suitable for mass production applications in the future. Moreover, metal-organic chemical vapor deposition (MOCVD) can be used to further promote dielectric reliability when compared to reactive-sputtering deposition. By using the MOCVD, the charge-to-breakdown (QBD) can be significantly improved, in addition to enhanced breakdown voltage and effective breakdown field. Our results clearly demonstrate that high-κ IPD, particularly deposited by MOCVD, possesses great potential for next-generation stacked-gate Flash memories.
KW - High-κ dielectric
KW - Inter-poly dielectric (IPD)
KW - Metal-organic chemical vapor deposition (MOCVD)
UR - http://www.scopus.com/inward/record.url?scp=34547793603&partnerID=8YFLogxK
U2 - 10.1109/LED.2007.901590
DO - 10.1109/LED.2007.901590
M3 - Article
AN - SCOPUS:34547793603
SN - 0741-3106
VL - 28
SP - 700
EP - 702
JO - Ieee Electron Device Letters
JF - Ieee Electron Device Letters
IS - 8
ER -