Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

Tien-Sheng Chao; C. L. Lee; T. F. Lei

doi:10.1049/el:19930774

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO₂/Si structure by ellipsometer

Tien-Sheng Chao, C. L. Lee, T. F. Lei

電子物理學系

研究成果: Article › 同行評審

摘要

An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO₂/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

原文	English
頁（從 - 到）	1157-1159
頁數	3
期刊	Electronics Letters
卷	29
發行號	13
DOIs	https://doi.org/10.1049/el:19930774
出版狀態	Published - 6月 1993

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10.1049/el:19930774

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@article{029e5ddac7204d30a4883b43af6cec5b,

title = "Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer",

abstract = "An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.",

keywords = "Ellipsometry, Measurement, Thin films",

author = "Tien-Sheng Chao and Lee, {C. L.} and Lei, {T. F.}",

year = "1993",

month = jun,

doi = "10.1049/el:19930774",

language = "English",

volume = "29",

pages = "1157--1159",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "13",

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TY - JOUR

T1 - Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

AU - Chao, Tien-Sheng

AU - Lee, C. L.

AU - Lei, T. F.

PY - 1993/6

Y1 - 1993/6

N2 - An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

AB - An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.

KW - Ellipsometry

KW - Measurement

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=0027612459&partnerID=8YFLogxK

U2 - 10.1049/el:19930774

DO - 10.1049/el:19930774

M3 - Article

AN - SCOPUS:0027612459

SN - 0013-5194

VL - 29

SP - 1157

EP - 1159

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Thickness determination of poly-Si/poly-oxide/poly-Si/SiO2/Si structure by ellipsometer

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Thickness determination of poly-Si/poly-oxide/poly-Si/SiO₂/Si structure by ellipsometer