摘要
An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM.
原文 | English |
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頁(從 - 到) | 1157-1159 |
頁數 | 3 |
期刊 | Electronics Letters |
卷 | 29 |
發行號 | 13 |
DOIs | |
出版狀態 | Published - 6月 1993 |