Thickness-dependent magnetotransport properties and terahertz response of topological insulator Bi2Te3thin films

Phuoc Huu Le, Po-Tsun Liu, Chih-Wei Luo*, Jiunn-Yuan Lin, Kaung-Hsiung Wu

*此作品的通信作者

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

We report the thickness (d) dependence of structural, morphological, magneto-transport properties as well as terahertz (THz) response in the 0.25–2.25 THz range of topological insulator Bi2Te3thin films grown by pulsed laser deposition (PLD). The Bi2Te3films exhibit a highly c-axis orientation (textured films) and two Raman-active modes of E2 gat 102.5 cm−1and A2 1gat 134.8 cm−1. The films obtain relatively low carrier concentration between 2.0 × 1019and 4.4 × 1019 cm−3. The films present two-dimensional weak (2D WAL) antilocalization magnetoresistance in a low magnetic field (B) and the 2D WAL shows thickness dependence, suggesting the presence of topological surface states (TSS). The THz transmittance increases owing to increased resistivity (associated with a decreased carrier concentration) when film thickness decreases from 152 to 16 QL. The complex conductance is well described by the Drude-Lorentz model with three components of the Drude surface, Drude bulk, and phonon. The Drude spectral weight (SW) of the surface is dominant and independent of the thickness. Besides, the Drude SW of the bulk and phonon SW linearly increase with increasing thickness.

原文English
頁(從 - 到)972-979
頁數8
期刊Journal of Alloys and Compounds
692
DOIs
出版狀態Published - 25 1月 2017

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