Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

C. H. Chen*, Y. K. Fang, C. W. Yang, S. F. Ting, Y. S. Tsair, M. C. Yu, Tuo-Hung Hou, M. F. Wang, S. C. Chen, C. H. Yu, M. S. Liang

*此作品的通信作者

研究成果: Article › 同行評審

27 引文 斯高帕斯（Scopus）

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Keyphrases

Engineering

Physics