Thermally-enhanced remote plasma nitrided ultrathin (1.65 nm) gate oxide with excellent performances in reduction of leakage current and boron diffusion

C. H. Chen*, Y. K. Fang, C. W. Yang, S. F. Ting, Y. S. Tsair, M. C. Yu, Tuo-Hung Hou, M. F. Wang, S. C. Chen, C. H. Yu, M. S. Liang

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研究成果: Article同行評審

26 引文 斯高帕斯(Scopus)

摘要

Ultrathin thermally enhanced remote plasma nitrided oxides (TE-RPNO) with equivalent oxide thickness down to 1.65 nm are fabricated to investigate their leakage current reduction and boron diffusion barrier performances. PMOSFET with TE-RPNO, compared to its conventional oxide counter-part, yields almost one order magnitude lower gate leakage current, less flatband voltage changes in high boron implantation dose or activation temperature, and shows broader process windows in the tradeoff between boron penetration and dopant activation.

原文English
頁(從 - 到)378-380
頁數3
期刊IEEE Electron Device Letters
22
發行號8
DOIs
出版狀態Published - 1 8月 2001

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