Thermal stability study of Ni/Ta n-GaN Schottky contacts

G. L. Chen; F. C. Chang; K. C. Shen; J. Ou; W. H. Chen; M. C. Lee; Wei-Kuo Chen; M. J. Jou; C. N. Huang

doi:10.1063/1.1425455

Thermal stability study of Ni/Ta n-GaN Schottky contacts

G. L. Chen, F. C. Chang, K. C. Shen, J. Ou, W. H. Chen, M. C. Lee, Wei-Kuo Chen, M. J. Jou, C. N. Huang

電子物理學系

研究成果: Article › 同行評審

26 引文斯高帕斯（Scopus）

摘要

The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700°C.

原文	English
頁（從 - 到）	595-597
頁數	3
期刊	Applied Physics Letters
卷	80
發行號	4
DOIs	https://doi.org/10.1063/1.1425455
出版狀態	Published - 28 1月 2002

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title = "Thermal stability study of Ni/Ta n-GaN Schottky contacts",

abstract = "The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700°C.",

author = "Chen, {G. L.} and Chang, {F. C.} and Shen, {K. C.} and J. Ou and Chen, {W. H.} and Lee, {M. C.} and Wei-Kuo Chen and Jou, {M. J.} and Huang, {C. N.}",

year = "2002",

month = jan,

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doi = "10.1063/1.1425455",

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T1 - Thermal stability study of Ni/Ta n-GaN Schottky contacts

AU - Chen, G. L.

AU - Chang, F. C.

AU - Shen, K. C.

AU - Ou, J.

AU - Chen, W. H.

AU - Lee, M. C.

AU - Chen, Wei-Kuo

AU - Jou, M. J.

AU - Huang, C. N.

PY - 2002/1/28

Y1 - 2002/1/28

N2 - The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700°C.

AB - The Schottky behavior of Ni/Ta and Ni contacts on n-GaN was investigated under various annealing conditions by current-voltage measurements. It is found that with the addition of Ta between the Ni layer and the GaN substrate the thermal stability properties of devices can be significantly improved. Experimental results indicate that a high quality Ni/Ta n-GaN Schottky diode with an ideality factor and barrier height of 1.16 and 1.24 eV, respectively, can be obtained under 1 h annealing, at 700°C.

UR - http://www.scopus.com/inward/record.url?scp=79956018922&partnerID=8YFLogxK

U2 - 10.1063/1.1425455

DO - 10.1063/1.1425455

M3 - Article

AN - SCOPUS:79956018922

SN - 0003-6951

VL - 80

SP - 595

EP - 597

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Thermal stability study of Ni/Ta n-GaN Schottky contacts

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