Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer

Hsiu Hsien Liao, Yi Ju Chen, Bing Yue Tsui*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.

原文English
主出版物標題2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728109428
DOIs
出版狀態Published - 4月 2019
事件2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan
持續時間: 22 4月 201925 4月 2019

出版系列

名字2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
國家/地區Taiwan
城市Hsinchu
期間22/04/1925/04/19

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