TY - GEN
T1 - Thermal Stability of Shallow Ge N+-P Junction with Thin GeSn Top Layer
AU - Liao, Hsiu Hsien
AU - Chen, Yi Ju
AU - Tsui, Bing Yue
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/4
Y1 - 2019/4
N2 - Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.
AB - Thermal stability of the Ge N+-P junction with thin GeSn top Layer is evaluated in this work. Thin GeSn itself would not increase junction leakage current although its bandgap is narrower than Ge. However, high dose ion implantation would damage the GeSn layer and Ge substrate so that the diffusion coefficient of Sn atom in Ge is enhanced. In this case, thermal annealing higher than 500 °C would degrade junction leakage current. It is thus suggested that low defects doping technique must be developed.
UR - http://www.scopus.com/inward/record.url?scp=85072107540&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2019.8804654
DO - 10.1109/VLSI-TSA.2019.8804654
M3 - Conference contribution
AN - SCOPUS:85072107540
T3 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
BT - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Y2 - 22 April 2019 through 25 April 2019
ER -