Thermal stability of Pd2Si and PdSi in thin film and in bulk diffusion couples

King-Ning Tu*

*此作品的通信作者

研究成果: Article同行評審

27 引文 斯高帕斯(Scopus)

摘要

Thermal stability of films of Pd2Si and PdSi formed on 〈111〉 Si wafers has been studied by x-ray diffraction. We observed that Pd2Si transformed to PdSi at temperatures around 810±10 °C and PdSi transformed back to Pd2Si when annealed below that temperature. We conclude that Pd2Si rather than PdSi is the thermodynamically stable phase on Si at low temperatures, contrary to the existing Pd-Si phase diagram. The conclusion has been confirmed by annealing bulk Pd-Si diffusion couples at 750 °C to form Pd2Si, then at 850 °C to transform part of the Pd2Si to PdSi, and then returning to 750 °C to convert the PdSi back to Pd2Si and Si. The bulk transformations were measured by x-ray diffraction and electron microprobe.

原文English
頁(從 - 到)428-432
頁數5
期刊Journal of Applied Physics
53
發行號1
DOIs
出版狀態Published - 1 12月 1982

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