Thermal stability and growth kinetics of Co2Si and CoSi in thin-film reactions

King-Ning Tu*, G. Ottaviani, R. D. Thompson, J. W. Mayer

*此作品的通信作者

研究成果: Article同行評審

83 引文 斯高帕斯(Scopus)

摘要

We have investigated the growth of Co2Si and CoSi around 400°C in samples of Si/Co and Si/CoSi/Co. We selected the Co-Si system because CoSi is known to have a larger heat of formation than Co2Si, hence the former should be favorable for formation from the viewpoint of free energy change or driving force. However, we found that Co2Si is the one which always grows first. This leads us to conclude that it is not the driving force but rather the kinetics which governs the selective growth of thin-film intermetallic compounds. Thus, we propose here that the first phase formation is selected by the one with the lowest kinetic barrier.

原文English
頁(從 - 到)4406-4410
頁數5
期刊Journal of Applied Physics
53
發行號6
DOIs
出版狀態Published - 1 12月 1982

指紋

深入研究「Thermal stability and growth kinetics of Co2Si and CoSi in thin-film reactions」主題。共同形成了獨特的指紋。

引用此