Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

H. L. Chen; C. H. Chen; Fu-Hsiang Ko; T. C. Chu; C. T. Pan; Horng-Chih Lin

doi:10.1116/1.1526352

Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

H. L. Chen^*, C. H. Chen, Fu-Hsiang Ko, T. C. Chu, C. T. Pan, Horng-Chih Lin

^*此作品的通信作者

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The chemically amplified deep-ultraviolet resist UV-135 for application in high-resolution electron-beam lithography was characterized. The thermal-flow technique for sub-35 nm contact-hole fabrication by electron-beam lithography was established. The optimal thermal-flow temperature was determined by DSC and WCM methods.

原文	English
頁（從 - 到）	2973-2978
頁數	6
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	6
DOIs	https://doi.org/10.1116/1.1526352
出版狀態	Published - 11月 2002

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10.1116/1.1526352

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title = "Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography",

abstract = "The chemically amplified deep-ultraviolet resist UV-135 for application in high-resolution electron-beam lithography was characterized. The thermal-flow technique for sub-35 nm contact-hole fabrication by electron-beam lithography was established. The optimal thermal-flow temperature was determined by DSC and WCM methods.",

author = "Chen, {H. L.} and Chen, {C. H.} and Fu-Hsiang Ko and Chu, {T. C.} and Pan, {C. T.} and Horng-Chih Lin",

year = "2002",

month = nov,

doi = "10.1116/1.1526352",

language = "English",

volume = "20",

pages = "2973--2978",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "0734-211X",

publisher = "AVS Science and Technology Society",

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TY - JOUR

T1 - Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

AU - Chen, H. L.

AU - Chen, C. H.

AU - Ko, Fu-Hsiang

AU - Chu, T. C.

AU - Pan, C. T.

AU - Lin, Horng-Chih

PY - 2002/11

Y1 - 2002/11

N2 - The chemically amplified deep-ultraviolet resist UV-135 for application in high-resolution electron-beam lithography was characterized. The thermal-flow technique for sub-35 nm contact-hole fabrication by electron-beam lithography was established. The optimal thermal-flow temperature was determined by DSC and WCM methods.

AB - The chemically amplified deep-ultraviolet resist UV-135 for application in high-resolution electron-beam lithography was characterized. The thermal-flow technique for sub-35 nm contact-hole fabrication by electron-beam lithography was established. The optimal thermal-flow temperature was determined by DSC and WCM methods.

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U2 - 10.1116/1.1526352

DO - 10.1116/1.1526352

M3 - Article

AN - SCOPUS:0036874413

SN - 0734-211X

VL - 20

SP - 2973

EP - 2978

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

ER -

Thermal-flow techniques for sub-35 nm contact-hole fabrication in electron-beam lithography

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