@inproceedings{06ab2ecd317a411abeb3135f33220a10,
title = "Thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography",
abstract = "In the recent ITRS roadmap, electron beam based lithography would provide an approach to leading IC technologies from the generation of 180 nm. to sub-100 nm. As a consequence, high resolution and sensitivity resists for electron beam lithography are required. Suitable process enhanced techniques for improving resolution of resists is also essential. Chemically amplified resists have been widely used in deep UV optical lithography for high throughput considerations. Recently, resist thermal flow and chemical shrink techniques have achieved 100 nm patterns by utilizing conventional deep UV optical lithography. We characterized positive chemically amplified resists UV-86 (Shipley) and MES-1EG (JSR) for high-resolution electron beam lithography. We demonstrated thermal flow and chemical shrink techniques for sub-100 nm contact hole fabrication in electron beam lithography.",
author = "Chen, {H. L.} and Fu-Hsiang Ko and Li, {L. S.} and Hsu, {C. K.} and Chen, {B. C.} and Chu, {T. C.} and Huang, {T. Y.}",
note = "Publisher Copyright: {\textcopyright} 2001 Japan Soc. Of Applied Physics.; International Microprocesses and Nanotechnology Conference, MNC 2001 ; Conference date: 31-10-2001 Through 02-11-2001",
year = "2001",
doi = "10.1109/IMNC.2001.984173",
language = "English",
series = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "228--229",
booktitle = "2001 International Microprocesses and Nanotechnology Conference, MNC 2001",
address = "United States",
}