摘要
Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots is investigated. Phosphor conversion efficiency and junction temperature were studied to understand thermal properties under different injected currents and environmental temperatures.
原文 | English |
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頁面 | 1865-1866 |
頁數 | 2 |
出版狀態 | Published - 31 8月 2011 |
事件 | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, 澳大利亞 持續時間: 28 8月 2011 → 1 9月 2011 |
Conference
Conference | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 |
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國家/地區 | 澳大利亞 |
城市 | Sydney |
期間 | 28/08/11 → 1/09/11 |