Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots

K. J. Chen*, H. C. Chen, C. W. Hung, C. H. Wang, M. H. Shih, Hao-Chung Kuo, Chien-Chung Lin

*此作品的通信作者

研究成果: Poster同行評審

摘要

Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots is investigated. Phosphor conversion efficiency and junction temperature were studied to understand thermal properties under different injected currents and environmental temperatures.

原文English
頁面1865-1866
頁數2
出版狀態Published - 31 8月 2011
事件Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, 澳大利亞
持續時間: 28 8月 20111 9月 2011

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
國家/地區澳大利亞
城市Sydney
期間28/08/111/09/11

指紋

深入研究「Thermal effect of GaN-based light-emitting diodes with CdSe/ZnS quantum dots」主題。共同形成了獨特的指紋。

引用此