Thermal diffusivity in diamond, SiC xN y and BC xN y

S. Chattopadhyay*, S. C. Chien, L. C. Chen, K. H. Chen, H. Y. Lee

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Thermal diffusivity (α) of free standing diamond, amorphous silicon carbon nitride (a-SiC xN y) and boron carbon nitride (a-BC xN y) thin films on crystalline silicon, has been studied using the travelling wave technique. Thermal diffusivity in all of them was found to depend on the microstructure. For a-SiC xN y and a-BC xN y thin films two distinct regimes of high and low carbon contents were observed in which the microstructure changed considerably and that has a profound effect on the thermal diffusivity. The defective C(sp)-N phase plays a key role in determining the film properties.

原文English
頁(從 - 到)708-713
頁數6
期刊Diamond and Related Materials
11
發行號3-6
DOIs
出版狀態Published - 3月 2002

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