Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper-diamond substrates

Ray-Hua Horng; Hung Lieh Hu; Re Ching Lin; Kun Cheng Peng; Yi Chen Chiang

doi:10.1149/1.3559794

Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper-diamond substrates

Ray-Hua Horng^*, Hung Lieh Hu, Re Ching Lin, Kun Cheng Peng, Yi Chen Chiang

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

6 引文斯高帕斯（Scopus）

摘要

Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm ²/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power.

原文	English
期刊	Electrochemical and Solid-State Letters
卷	14
發行號	5
DOIs	https://doi.org/10.1149/1.3559794
出版狀態	Published - 16 3月 2011

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title = "Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper-diamond substrates",

abstract = "Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm 2/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power.",

author = "Ray-Hua Horng and Hu, {Hung Lieh} and Lin, {Re Ching} and Peng, {Kun Cheng} and Chiang, {Yi Chen}",

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AU - Horng, Ray-Hua

AU - Hu, Hung Lieh

AU - Lin, Re Ching

AU - Peng, Kun Cheng

AU - Chiang, Yi Chen

PY - 2011/3/16

Y1 - 2011/3/16

N2 - Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm 2/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power.

AB - Light-emitting diode (LED) packages with various heat spreaders were developed to examine the heat dissipation property of sapphire-based LEDs. A cap-shaped copper-diamond sheet was fabricated by composite electroplating and directly contacted to the sapphire surface to enhance heat dissipation from the chip. The thermal diffusivity of the copper-diamond sheet was 0.7179 cm 2/s, as measured using the laser-flash method. LEDs with the copper-diamond sheet presents low surface temperature (49C at 700 mA injecting current) and low thermal resistance (5.8 K/W). These findings suggest that the copper-diamond sheet helped reduce LED thermal resistance, and thereby prevented heat accumulation. The LED package also exhibited high light output power.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

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Thermal behavior of sapphire-based InGaN light-emitting diodes with cap-shaped copper-diamond substrates

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