Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers

B. S. Lim*, W. C. Pritchet, K. P. Rodbell, King-Ning Tu

*此作品的通信作者

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2 引文 斯高帕斯(Scopus)

摘要

The mechanical stresses of a pure Al film and a low-thermal-expansion Al-3 at. % Ge thin film on (100) Si wafers are measured and compared in the temperature range of room temperature to 400 °C by the vibrating membrane method. The results are discussed including the comparison with those obtained by the popular wafer bending method. It was found that the chemical reaction between the Al and the Si substrate affects the mechanical stress. The relatively low stress in the Al(Ge) film is due to the interference of Ge precipitation. The relatively slow relaxation in the Al film during annealing may be caused by the dissolution of Si into Al.

原文English
頁(從 - 到)2945-2947
頁數3
期刊Journal of Applied Physics
74
發行號4
DOIs
出版狀態Published - 1 十二月 1993

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