Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

H. F. Chuang*, C. P. Lee, Chia-Ming Tsai, D. C. Liu, J. S. Tsang, J. C. Fan

*此作品的通信作者

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100°C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed.

原文English
頁(從 - 到)366-371
頁數6
期刊Journal of Applied Physics
83
發行號1
DOIs
出版狀態Published - 1 1月 1998

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