Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

H. F. Chuang; C. P. Lee; Chia-Ming Tsai; D. C. Liu; J. S. Tsang; J. C. Fan

doi:10.1063/1.366692

Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

H. F. Chuang^*, C. P. Lee, Chia-Ming Tsai, D. C. Liu, J. S. Tsang, J. C. Fan

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14 引文斯高帕斯（Scopus）

摘要

We studied the thermal reaction of Pd/In_0.52Al_0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al_0.25Ga_0.75As and Pd/In_0.53Ga_0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100°C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed.

原文	English
頁（從 - 到）	366-371
頁數	6
期刊	Journal of Applied Physics
卷	83
發行號	1
DOIs	https://doi.org/10.1063/1.366692
出版狀態	Published - 1 1月 1998

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title = "Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies",

abstract = "We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100°C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed.",

author = "Chuang, {H. F.} and Lee, {C. P.} and Chia-Ming Tsai and Liu, {D. C.} and Tsang, {J. S.} and Fan, {J. C.}",

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T1 - Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

AU - Chuang, H. F.

AU - Lee, C. P.

AU - Tsai, Chia-Ming

AU - Liu, D. C.

AU - Tsang, J. S.

AU - Fan, J. C.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100°C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed.

AB - We studied the thermal reaction of Pd/In0.52Al0.48As contacts using capacitance-voltage (C-V), current-voltage, Auger electron spectroscopy, and x-ray diffraction analyses and compared the results to those for Pd/Al0.25Ga0.75As and Pd/In0.53Ga0.47As contacts. The thickness of InAlAs consumed by the reaction during annealing was calculated directly from the measured C-V profiles. Pd starts to react with InAlAs at a temperature of 100°C, lower than it does with AlGaAs. For thermally annealed Pd/InAlAs and Pd/AlGaAs, both compositional and structural changes were found at the Pd/semiconductor interface. However, in heat-treated Pd/InGaAs samples, compositional changes but no structural changes were observed.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Thermal annealing of Pd/InAlAs Schottky contacts for transistor buried-gate technologies

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