TY - GEN
T1 - Theoretical study on the optoelectronic properties of Al1-xGaxN-based deep UV LEDs with single and multiple quantum well heterostructures
AU - Suwito, Galih Ramadana
AU - Shih, Ya Hsuan
AU - Chen, Sung Wen Huang
AU - Zhang, Zi Hui
AU - Kuo, Hao Chung
N1 - Publisher Copyright:
© 2021 The Author(s)
PY - 2021/7
Y1 - 2021/7
N2 - Characteristics of Al1-xGaxN-based deep UV LEDs with varied number of Al0.5Ga0.5N/Al0.4Ga0.6N quantum well(s) are theoretically investigated. The effects of quantum design on the internal quantum efficiency, radiative transport, and output power are discussed.
AB - Characteristics of Al1-xGaxN-based deep UV LEDs with varied number of Al0.5Ga0.5N/Al0.4Ga0.6N quantum well(s) are theoretically investigated. The effects of quantum design on the internal quantum efficiency, radiative transport, and output power are discussed.
UR - http://www.scopus.com/inward/record.url?scp=85119688729&partnerID=8YFLogxK
U2 - 10.1364/NOMA.2021.NoF3B.3
DO - 10.1364/NOMA.2021.NoF3B.3
M3 - Conference contribution
AN - SCOPUS:85119688729
T3 - Optics InfoBase Conference Papers
BT - Novel Optical Materials and Applications, NOMA 2021
PB - The Optical Society
T2 - Novel Optical Materials and Applications, NOMA 2021 - Part of OSA Advanced Photonics Congress 2021
Y2 - 26 July 2021 through 29 July 2021
ER -