For the first time, analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower Vg (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
|頁（從 - 到）||1071-1073|
|期刊||IEEE Electron Device Letters|
|出版狀態||Published - 1 10月 2010|