The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov; S. A. Blokhin; N. A. Maleev; A. V. Sakharov; V. G. Tikhomirov; M. V. Maksimov; V. M. Ustinov; A. R. Kovsh; S. S. Mikhrin; N. N. Ledentsov; H. P.D. Yang; Kuo-Jui Lin; R. S. Hsiao; J. Y. Chi

doi:10.1134/S1063782607100181

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. G. Kuzmenkov^*, S. A. Blokhin, N. A. Maleev, A. V. Sakharov, V. G. Tikhomirov, M. V. Maksimov, V. M. Ustinov, A. R. Kovsh, S. S. Mikhrin, N. N. Ledentsov, H. P.D. Yang, Kuo-Jui Lin, R. S. Hsiao, J. Y. Chi

^*此作品的通信作者

研究成果: Article › 同行評審

摘要

To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

原文	English
頁（從 - 到）	1224-1229
頁數	6
期刊	Semiconductors
卷	41
發行號	10
DOIs	https://doi.org/10.1134/S1063782607100181
出版狀態	Published - 10月 2007

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Kuzmenkov, A. G., Blokhin, S. A., Maleev, N. A., Sakharov, A. V., Tikhomirov, V. G., Maksimov, M. V., Ustinov, V. M., Kovsh, A. R., Mikhrin, S. S., Ledentsov, N. N., Yang, H. P. D., Lin, K.-J., Hsiao, R. S., & Chi, J. Y. (2007). The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. Semiconductors, 41(10), 1224-1229. https://doi.org/10.1134/S1063782607100181

@article{277d523984c042bea72738e4906c1e57,

title = "The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots",

abstract = "To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.",

author = "Kuzmenkov, {A. G.} and Blokhin, {S. A.} and Maleev, {N. A.} and Sakharov, {A. V.} and Tikhomirov, {V. G.} and Maksimov, {M. V.} and Ustinov, {V. M.} and Kovsh, {A. R.} and Mikhrin, {S. S.} and Ledentsov, {N. N.} and Yang, {H. P.D.} and Kuo-Jui Lin and Hsiao, {R. S.} and Chi, {J. Y.}",

year = "2007",

month = oct,

doi = "10.1134/S1063782607100181",

language = "English",

volume = "41",

pages = "1224--1229",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Pleiades Publishing",

number = "10",

}

Kuzmenkov, AG, Blokhin, SA, Maleev, NA, Sakharov, AV, Tikhomirov, VG, Maksimov, MV, Ustinov, VM, Kovsh, AR, Mikhrin, SS, Ledentsov, NN, Yang, HPD, Lin, K-J, Hsiao, RS & Chi, JY 2007, 'The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots', Semiconductors, 卷 41, 編號 10, 頁 1224-1229. https://doi.org/10.1134/S1063782607100181

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T1 - The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

AU - Kuzmenkov, A. G.

AU - Blokhin, S. A.

AU - Maleev, N. A.

AU - Sakharov, A. V.

AU - Tikhomirov, V. G.

AU - Maksimov, M. V.

AU - Ustinov, V. M.

AU - Kovsh, A. R.

AU - Mikhrin, S. S.

AU - Ledentsov, N. N.

AU - Yang, H. P.D.

AU - Lin, Kuo-Jui

AU - Hsiao, R. S.

AU - Chi, J. Y.

PY - 2007/10

Y1 - 2007/10

N2 - To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

AB - To suppress the generation of high-order modes in vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots, the method of formation of a spatially ordered array of etched holes in the upper distributed Bragg reflector was used. Single-mode vertical-cavity surface-emitting lasers for spectral region of 990 nm with current-aperture diameter of 20 μm, threshold current 0.9 mA, and maximum output power 3.8 mW at room temperature were demonstrated. Single-mode lasing with the coefficient of side-mode suppression in excess of 35 dB is retained in the entire range of pump currents. A decrease in the current oxide aperture to sizes that are close to those of the optical aperture brings about an increase in the external quantum efficiency; however, in this case, the transition to the multimode of lasing is observed at high pump currents.

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DO - 10.1134/S1063782607100181

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JO - Semiconductors

JF - Semiconductors

IS - 10

ER -

The use of spatially ordered arrays of etched holes for fabrication of single-mode vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

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