The study of high breakdown voltage vertical gan-on-gan p-i-n diode with modified mesa structure

Wen Chieh Ho, Yao Hsing Liu, Wen Hsuan Wu, Sung Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo*, Chia-Wei Sun

*此作品的通信作者

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In this paper, we fabricated Gallium Nitride (GaN) vertical p-i-n diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was maintained. The vertical GaN p-i-n diode showed a low specific on-resistance of 0.85 mΩ-cm2 and high breakdown voltage (BV) of 2.98 kV. The high breakdown voltage can be attributed to the thick GaN epi-layer and corresponds to the mesa structure. Improvement of the device characteristics by the mesa structure was investigated using device simulations. We proved that a deeper mesa depth is able to decrease the electric field at the bottom of the mesa structure. Furthermore, a smaller mesa bevel angle will assist the BV up to 2.98 kV at a 60 bevel angle. Our approach demonstrates structural optimization of GaN vertical p-i-n diodes is useful to improve the device performance.

原文English
文章編號712
頁(從 - 到)1-12
頁數12
期刊Crystals
10
發行號8
DOIs
出版狀態Published - 8月 2020

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