摘要
A Ti-doped Y 2 O 3 (Y 2 Ti 2 O 5 ) dielectric on polycrystalline silicon followed by rapid thermal annealing results in improved characteristics including a higher effective dielectric constant, higher breakdown electric field, lower electron trapping rate, and larger charge-to-breakdown when compared with Y 2 O 3 . The performance of high-k Y 2 O 3 and Y 2 Ti 2 O 5 dielectrics were investigated using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), capacitance-voltage, and current density-voltage. Incorporating Ti into the Y 2 O 3 dielectric imparts improvements in the structural and electrical performance of the material. The Y 2 Ti 2 O 5 dielectric with 800 °C annealing treatment has the best performance among all the samples tested.
| 原文 | English |
|---|---|
| 頁（從 - 到） | 3043-3050 |
| 頁數 | 8 |
| 期刊 | Ceramics International |
| 卷 | 43 |
| 發行號 | 3 |
| DOIs | |
| 出版狀態 | Published - 15 2月 2017 |