The sputtering of PtSi and NiSi

J. M. Poate; W. L. Brown; R. Homer; W. M. Augustyniak; J. W. Mayer; King-Ning Tu; W. F. van der Weg

doi:10.1016/0029-554X(76)90756-4

The sputtering of PtSi and NiSi

J. M. Poate^*, W. L. Brown, R. Homer, W. M. Augustyniak, J. W. Mayer, King-Ning Tu, W. F. van der Weg

^*此作品的通信作者

國際半導體產業學院

研究成果: Article › 同行評審

57 引文斯高帕斯（Scopus）

摘要

Absolute sputtering yields have been obtained, by Rutherford scattering, for the consttuents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields (e.g. the partial sputtering yields of Si in PtSi, S_PtSl and NiSi, S_NiSi are considerably larger than that of elemental Si, S_Si). No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 Å surface layer substantially enriched with Pt.

原文	English
頁（從 - 到）	345-349
頁數	5
期刊	Nuclear Instruments and Methods
卷	132
發行號	C
DOIs	https://doi.org/10.1016/0029-554X(76)90756-4
出版狀態	Published - 1 1月 1976

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10.1016/0029-554X(76)90756-4

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引用此

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abstract = "Absolute sputtering yields have been obtained, by Rutherford scattering, for the consttuents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields (e.g. the partial sputtering yields of Si in PtSi, SPtSl and NiSi, SNiSi are considerably larger than that of elemental Si, SSi). No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 {\AA} surface layer substantially enriched with Pt.",

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T1 - The sputtering of PtSi and NiSi

AU - Poate, J. M.

AU - Brown, W. L.

AU - Homer, R.

AU - Augustyniak, W. M.

AU - Mayer, J. W.

AU - Tu, King-Ning

AU - van der Weg, W. F.

PY - 1976/1/1

Y1 - 1976/1/1

N2 - Absolute sputtering yields have been obtained, by Rutherford scattering, for the consttuents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields (e.g. the partial sputtering yields of Si in PtSi, SPtSl and NiSi, SNiSi are considerably larger than that of elemental Si, SSi). No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 Å surface layer substantially enriched with Pt.

AB - Absolute sputtering yields have been obtained, by Rutherford scattering, for the consttuents of the thin film compounds PtSi and NiSi on bombardment with 900 eV and 20 keV Ar; sputtering yields have also been determined for thin film samples of Si (poly and single crystal), Ni and Pt. The partial sputtering yields of the compounds are not related in any simple fashion to the corresponding elemental sputtering yields (e.g. the partial sputtering yields of Si in PtSi, SPtSl and NiSi, SNiSi are considerably larger than that of elemental Si, SSi). No deviations from stoichiometric sputtering are observed. However 20 keV Ar sputtering of PtSi produces a 200 Å surface layer substantially enriched with Pt.

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