The role of lattice dynamics in ferroelectric switching

Qiwu Shi*, Eric Parsonnet, Xiaoxing Cheng, Natalya Fedorova, Ren Ci Peng, Abel Fernandez, Alexander Qualls, Xiaoxi Huang, Xue Chang, Hongrui Zhang, David Pesquera, Sujit Das, Dmitri Nikonov, Ian Young, Long Qing Chen, Lane W. Martin, Yen-Lin Huang, Jorge Íñiguez, Ramamoorthy Ramesh


研究成果: Article同行評審

30 引文 斯高帕斯(Scopus)


Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10’s of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching.

頁(從 - 到)1-10
期刊Nature Communications
出版狀態Published - 2 3月 2022


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