The power of functional scaling: Beyond the power consumption challenge and the scaling roadmap

Albert Chin*, Séan P. McAlister

*此作品的通信作者

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

The increases in the densities of devices and their functionality in circuits are making the issue of power dissipation, both static and dynamic, a serious constraint to future scaling advances. 3-D integration of novel Ge-based devices with standard Si devices is shown to provide potential ways to address the dc and ac power consumption issues in advanced ICs. Advantages of this scheme include low processing temperature and excellent lattice-match with GaAs.

原文English
頁(從 - 到)27-35
頁數9
期刊IEEE Circuits and Devices Magazine
21
發行號1
DOIs
出版狀態Published - 1 一月 2005

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