The polarity dependence of ONO thickness for wrapped-select-gate (WSG) SONOS memory

Kuan Ti Wang*, Tien-Sheng Chao, Woei Cherng Wu, Chao Sung Lai

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

2-bits/cell operation characteristics of WSG-SONOS memory has been fully studied in different ONO thickness. The 2-bits/cell characteristics of WSG-SONOS memory will be determined by tunneling oxide and total ONO thicknesses. Besides, thicker top oxide thickness will contribute to better gate disturbance performance while maintaining the same drain disturbance. We also found that the excellent endurance can be performed for the device with thinner tunneling oxide thickness. Optimized ONO thickness for WSG-SONOS memory will be demonstrated in this paper.

原文English
主出版物標題17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007
頁面51-54
頁數4
DOIs
出版狀態Published - 1 12月 2007
事件17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007 - Taipei, Taiwan
持續時間: 3 12月 20075 12月 2007

出版系列

名字Records of the IEEE International Workshop on Memory Technology, Design and Testing
ISSN(列印)1087-4852

Conference

Conference17th IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2007
國家/地區Taiwan
城市Taipei
期間3/12/075/12/07

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