The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

G. W. Shu, C. K. Wang, J. S. Wang, J. L. Shen*, R. S. Hsiao, Wu-Ching Chou, Jenn-Fang Chen, T. Y. Lin, C. H. Ko, C. M. Lai

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170K, and then decreases as the temperature increases further above 170K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs.

原文English
文章編號002
頁(從 - 到)5722-5725
頁數4
期刊Nanotechnology
17
發行號23
DOIs
出版狀態Published - 14 12月 2006

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