The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya Hsiang Tai; Yi Cheng Yuan; Cheng Che Tu; Pin Chun Wang

doi:10.1109/JEDS.2022.3164082

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

Ya Hsiang Tai, Yi Cheng Yuan^*, Cheng Che Tu, Pin Chun Wang

^*此作品的通信作者

光電工程學系

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

原文	English
頁（從 - 到）	309-312
頁數	4
期刊	IEEE Journal of the Electron Devices Society
卷	10
DOIs	https://doi.org/10.1109/JEDS.2022.3164082
出版狀態	Published - 2022

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10.1109/JEDS.2022.3164082

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@article{52356f6b68544c47bd01fee9d1406634,

title = "The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination",

abstract = "Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.",

keywords = "Amorphous silicon, gap-type, noise, thin-film transistors (TFTs)",

author = "Tai, {Ya Hsiang} and Yuan, {Yi Cheng} and Tu, {Cheng Che} and Wang, {Pin Chun}",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2022",

doi = "10.1109/JEDS.2022.3164082",

language = "English",

volume = "10",

pages = "309--312",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

AU - Tai, Ya Hsiang

AU - Yuan, Yi Cheng

AU - Tu, Cheng Che

AU - Wang, Pin Chun

PY - 2022

Y1 - 2022

N2 - Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

AB - Gap-type amorphous silicon (a-Si) thin-film transistor (TFT) used as photo sensor has been reported in previous literature. However, the noise behavior of gap-type a-Si TFT is not inspected yet. Therefore, we investigate the noise response of the gap-type a-Si TFT under illumination in this paper. We compare the difference between the results of the gap-type and the conventional-type TFTs. In addition, we analyze it including the perspectives of power spectrum, integral power spectrum, Hooge parameter, fluctuate slope. Finally, we explain the reason for its fluctuate slope transition and review the correlation between noise behavior and photo effect mechanism.

KW - Amorphous silicon

KW - gap-type

KW - noise

KW - thin-film transistors (TFTs)

UR - http://www.scopus.com/inward/record.url?scp=85127502719&partnerID=8YFLogxK

U2 - 10.1109/JEDS.2022.3164082

DO - 10.1109/JEDS.2022.3164082

M3 - Article

AN - SCOPUS:85127502719

SN - 2168-6734

VL - 10

SP - 309

EP - 312

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

The Noise Behavior of Gap-Type Amorphous Silicon TFT Under Illumination

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