The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi; Jin He; Mohan Dunga; Chung Hsun Lin; Babak Heydari; Hui Wan; Mansun Chan; Ali M. Niknejad; Chen-Ming Hu

doi:10.1109/CICC.2004.1358720

The next generation BSIM for sub-100nm mixed-signal circuit simulation

Xuemei Xi^*, Jin He, Mohan Dunga, Chung Hsun Lin, Babak Heydari, Hui Wan, Mansun Chan, Ali M. Niknejad, Chen-Ming Hu

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

原文	English
頁（從 - 到）	13-16
頁數	4
期刊	Proceedings of the Custom Integrated Circuits Conference
DOIs	https://doi.org/10.1109/CICC.2004.1358720
出版狀態	Published - 2004
事件	Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC - Orlando, FL, 美國持續時間: 3 10月 2004 → 6 10月 2004

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10.1109/CICC.2004.1358720

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引用此

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title = "The next generation BSIM for sub-100nm mixed-signal circuit simulation",

abstract = "This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.",

author = "Xuemei Xi and Jin He and Mohan Dunga and Lin, {Chung Hsun} and Babak Heydari and Hui Wan and Mansun Chan and Niknejad, {Ali M.} and Chen-Ming Hu",

year = "2004",

doi = "10.1109/CICC.2004.1358720",

language = "English",

pages = "13--16",

journal = "Proceedings of the Custom Integrated Circuits Conference",

issn = "0886-5930",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC ; Conference date: 03-10-2004 Through 06-10-2004",

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T1 - The next generation BSIM for sub-100nm mixed-signal circuit simulation

AU - Xi, Xuemei

AU - He, Jin

AU - Dunga, Mohan

AU - Lin, Chung Hsun

AU - Heydari, Babak

AU - Wan, Hui

AU - Chan, Mansun

AU - Niknejad, Ali M.

AU - Hu, Chen-Ming

PY - 2004

Y1 - 2004

N2 - This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

AB - This paper outlines the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate physics that is easily extended to non-chargesheet, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.

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U2 - 10.1109/CICC.2004.1358720

DO - 10.1109/CICC.2004.1358720

M3 - Conference article

AN - SCOPUS:17044430931

SN - 0886-5930

SP - 13

EP - 16

JO - Proceedings of the Custom Integrated Circuits Conference

JF - Proceedings of the Custom Integrated Circuits Conference

T2 - Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC

Y2 - 3 October 2004 through 6 October 2004

ER -

The next generation BSIM for sub-100nm mixed-signal circuit simulation

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