The New General Realization Theory of FET-Like Integrated Voltage-Controlled Negative Differential Resistance Devices

Chung-Yu Wu, Ching Yuan Wu

    研究成果: Article同行評審

    7 引文 斯高帕斯(Scopus)

    摘要

    A new general realization theory of FET-like voltage-controlled negative differential resistance device is presented. A feedback-transfer model (VIM) of the FET, which contains four different kinds of feedback connections and their own mathematical conditions, is set up. Based on this model, a general simple realization technique is explored. Using this technique many negative differential resistance FET-like integrated devices either new or published are generated, and their integrated circuit configurations and basic properties are studied and discussed. Application example for a specific device is demonstrated, which substantiates the exactness of the proposed theory.

    原文English
    頁(從 - 到)382-390
    頁數9
    期刊IEEE transactions on circuits and systems
    28
    發行號5
    DOIs
    出版狀態Published - 5月 1981

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