The modified bias-stress effect in organic TFTs

Hsiao-Wen Zan*, Shih Chin Kao, Huang Wei Pan, Kun Chih Lin, Chen Chou Hsu, F. Y. Gan

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

In this paper, the influence of drain bias on the bias stress effect in pentacene-based organic thin-film transistors was studied. It was found that, under gate bias stress measurement, the threshold voltage shift was strongly affected by the drain bias due to the varied channel charge amount. As a result, conventional stretched-exponential function was modified with a channel charge normalization factor to describe the dependence of threshold voltage shift on the stressing time. The result is important for the design of organic electronic or OTFT active-matrix display, in which the influence of both the gate and the drain biases has to be considered.

原文English
主出版物標題IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings
頁面515-518
頁數4
出版狀態Published - 7月 2007
事件International Display Manufacturing Conference and Exhibition, IDMC 2007 - Taipei, Taiwan
持續時間: 3 7月 20076 7月 2007

出版系列

名字IDMC 2007 - International Display Manufacturing Conference and FPD Expo - Proceedings

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC 2007
國家/地區Taiwan
城市Taipei
期間3/07/076/07/07

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