The mechanisms of on/off currents for the dual-gate a-Si:H thin film transistors with various length sizes of indium-tin-oxide top gate

Chung Yu Liang*, T. C. Chang, Po-Tsun Liu, Feng Yuan Gan, F. S. Yeh

*此作品的通信作者

研究成果: Paper › 同行評審

1 引文 斯高帕斯（Scopus）

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Keyphrases

Engineering

Material Science