@inproceedings{721ed33da3fc43a48fa6fad3f3dec832,
title = "The Mechanism of Field-Plate Induced the Breakdown Voltage Change of High Voltage LDMOS",
abstract = "The field-plate (FP) has been commonly used to increase the breakdown voltage for achieving the low on-resistance (Ron) high-voltage (HV) device. However, the mechanism of the FP induced the breakdown-voltage change of HV device is not fully understood. From the TCAD simulation, it finds that the electrical field of the reduced-surface field (RESURF) region of HV device is affected by the thickness differences of the dielectrics above this region. As the field-plate is inserted into these dielectrics, the dielectric thickness differences are reduced to lead to the electrical field suppression of RESURF region, resulting in the breakdown voltage increase of HV device. ",
keywords = "dielectrics, electric field, field-plate, potential, reduced-surface field (RESURF)",
author = "Shih, {Ching Kuei} and Liao, {Chih Cherng} and Karuna Nidhi and Kan, {Kai Chuan} and Chen, {Ke Horng} and Lee, {Jian Hsing}",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 44th International Semiconductor Conference, CAS 2021 ; Conference date: 06-10-2021 Through 08-10-2021",
year = "2021",
doi = "10.1109/CAS52836.2021.9604135",
language = "English",
series = "Proceedings of the International Semiconductor Conference, CAS",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "89--92",
booktitle = "2021 International Semiconductor Conference, CAS 2021",
address = "美國",
}