The low-temperature characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

Meng Hwang Liu*, Yeong Her Wang, Mau Phon Houng, Jenn-Fang Chen, Alfred Y. Cho

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

The characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures are investigated. In addition to the main negative differential resistance peaks, kinks or small peaks can be clearly seen, especially at low temperature. The effects of the heavy-hole states are expected to play an important role. Here, a k· p model incorporating the coupling effects of the heavy-hole states is used. It is found that the kinks and small peaks are the results of heavy-hole coupling. Furthermore, the electron distribution in the InAs emitter also contributes to the phenomena observed in the low-temperature characteristics.

原文English
頁(從 - 到)1178-1183
頁數6
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
35
發行號2S
DOIs
出版狀態Published - 2月 1996

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