Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.
|頁（從 - 到）||673-676|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 12月 2003|
|事件||IEEE International Electron Devices Meeting - Washington, DC, United States|
持續時間: 8 12月 2003 → 10 12月 2003