The Integration of Proton Bombardment Process into the manufacturing of Mixed-signal/RF Chips

D. D. Tang*, W. C. Lin, L. S. Lai, C. H. Wang, L. P. Lee, H. M. Hsu, C. M. Wu, C. W. Chang, W. Y. Lien, C. P. Chao, C. Y. Lee, G. J. Chern, Jyh-Chyurn Guo, C. S. Chang, Y. C. Sun, D. S. Du, K. C. Lan, L. F. Lin

*此作品的通信作者

    研究成果: Conference article同行評審

    5 引文 斯高帕斯(Scopus)

    摘要

    Proton bombardment technology is integrated into standard IC process as a post-backend process module to form local semi-insulating regions on mixed-signal/RF chips. With 10 15 -cm -2 , 100-μm deep bombardment through mask windows, ρ S =20k-∼50k Ω.cm regions are formed, which are thermally stable at 200C. High-Q inductors and reliable MOSFETs are made on same chip with no need of tuning the existing wafer process. Design rules are established.

    原文English
    頁(從 - 到)673-676
    頁數4
    期刊Technical Digest - International Electron Devices Meeting
    DOIs
    出版狀態Published - 1 12月 2003
    事件IEEE International Electron Devices Meeting - Washington, DC, United States
    持續時間: 8 12月 200310 12月 2003

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